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    Friedrich-Alexander-Universität Chair of Electron Devices
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      • Silicon Semiconductor Technology
        • Realisierung von Koppelkondensatoren für Betriebsspannungen über 1200V durch Integration von Parallelwiderständen
        • Hybrid polymer based Bragg grating sensors – Fundamental investigations and application
        • A Synergetic Training Network on Energy beam Processing: from Modelling to Industrial Applications
        • Atomic layer deposition of dopant source layers for semiconductor doping – Characterization and modelling of drive-in processes
      • Wide-Bandgap Devices
        • Untersuchungen zur Leistungsdichte und Effizienz eines isolierenden DC/DC-Wandlers in GaN-Technologie
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        • SiC-BIFET: Untersuchungen zu bipolaren SiC-Feldeffekttransistoren für das Mittelspannungsnetz
        • Development of semiconductor sensors based on silicon carbide
        • Kristallzüchtung von Nitrid-Einkristallen mit hoher Reinheit
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        • GRK 1161: Disperse systems for electronic applications – subproject electron devices in a nano-crystalline matrix
        • Liquid-phase processing of silicon thin films and electron devices based on polysilane precursors
        • Thin-Film Transistors with Novel Architecture for RF Circuits and Systems
        • Engineering of Nanoelectronic Materials – B6 (Druckbare Elektronik)
        • Local leakage currents in nanoparticulate films
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        • Herstellung und Charakterisierung von Heterostrukturen aus 2D Materialien
        • Entwicklung eines PDMS-basierten Mikrofluidiksystems
        • Erforschung der Oberflächenpräparation und der Rückgewinnung von Aluminiumnitrid-Substraten
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        • Leistungszentrum Elektroniksysteme (LZE), Teilprojekt 1: “Impedanzmessplatz für DC/DC-Wandler”
        • Leistungszentrum Elektroniksysteme (LZE), Teilprojekt 2: “Robuste Gestaltung induktiver Energieüberträger für bewegte Anwendungen”
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    4. Local leakage currents in nanoparticulate films

    Local leakage currents in nanoparticulate films

    In page navigation: Research
    • Silicon Semiconductor Technology
    • Wide-Bandgap Devices
    • Anorganic Thin Film Electronics
      • GRK 1161: Disperse systems for electronic applications - subproject electron devices in a nano-crystalline matrix
      • Liquid-phase processing of silicon thin films and electron devices based on polysilane precursors
      • Thin-Film Transistors with Novel Architecture for RF Circuits and Systems
      • Engineering of Nanoelectronic Materials - B6 (Druckbare Elektronik)
      • Local leakage currents in nanoparticulate films
    • Anorganische Dünnschichtelektronik
    • Quantum Technologies
    • Other Projects

    Local leakage currents in nanoparticulate films

    Hybride semiconductors – metal nanowire composites for opto-electronic devices

    (Third Party Funds Group – Sub project)

    Overall project: In situ Microscopy with Electrons, X-rays and Scanning Probes
    Project leader: Christoph Brabec, Lothar Frey
    Project members: Simon Kahmann, Moses Richter, Shreetu Shrestha, Ievgen Levchuk, César Omar Ramírez Quiroz, Violetta Kalancha, Jonas Wortmann
    Start date: 1. October 2013
    End date: 30. September 2017
    Acronym: GRK1896-A6
    Funding source: DFG / Graduiertenkolleg (GRK)
    URL:

    Abstract

    Project A6 combines the findings from the first funding period, which investigated the transport properties of metallic nanowires as well as inorganic nanoparticles as a function of microstructure and microstructure with c-AFM and electron microscopy methods. The follow-up project will address the electrical and optical properties of nanoparticle-filled nanowire composites. The focus of the investigations is on the microscopic understanding of the charge carrier transport between the semiconducting matrix and the metallically conductive nanowires. In situ X-ray spectroscopy under light (c-AFM and STM) should provide insight into the electrical processes at the interfaces.

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      Chair of Electron Devices
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