Silicon Semiconductor Technology

Coverbild:

Beschreibung des Forschungsbereiches "Halbleitermaterialsynthese & Prozesstechnologie" in CRIS

Projects:

Entwicklung eines PDMS-basierten Mikrofluidiksystems

GRK1896-A2: Growth and stability of anisotropic nanoparticles in liquids

Liquid cell transmission electron microscopy (LCTEM) is a novel, highly attractive method for in situ studies into dynamic processes of nanoparticulate systems in liquid environment excluding influences of drying effects. For this purpose a small volume of the fluid under investigation is confined between two electron transparent membranes to prevent vaporization in the ultra-high vacuum of an electron microscope. In the context of this project innovative liquid cell architectures are…

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EUV: Pathfinding the perfect EUV mask

Semiconductor industry is pushing for a smaller gate size on
the chip. EUV is already used in high-volume manufacturing and delivers
resolution of 13 nm lines and spaces with NA 0.33 system. The high-NA of 0.55
will be used in the high-volume manufacturing by 2023. The high-NA system has a
resolution of 8 nm lines and spaces. High-NA system features an anamorphic
demagnification of 4× in y-direction and 8× x-direction instead of 4×
in both directions in NA of 0.33. The combination of smaller features to print
and the anamorphic demagnification makes the system more sensitive to
variations in the mask design and to optical constants. This work explores the effect
of the optical constants’ variations in the mask absorber materials and
different mask components’ effects.

This work aims to investigate the effect of the mask in
high-NA EUVL (extreme-ultraviolet lithography) on the resulting image quality,
which to be printed on the wafer for producing ICs (integrated circuits) and
chips. The mask in EUVL contains two main parts; an absorber and a reflective
multilayer that works as a Bragg mirror. The effect of both parts and the
interaction between them are the core of this thesis. 

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Modelling Nanomechanical Effects in Advanced Lithographic Materials and Processes

The main goal of this work is to model and simulate shrinkage and deformation effects in photoresists during lithographic processing. The finite element method (FEM) is used to model and simulate the mechanical deformation in the photoresist material and the Dr.LiTHO lithography simulator is used to simulate the optical and chemical aspects. Moreover, a machine learning implementaion is introduced which helps predict pattern collapse probabilities making use of training data generated with the help of FEM tools and Dr.LiTHO.

The research project is being worked on as part of an LEB PhD project in collaboration with the Fraunhofer Institute of Integrated Systems and Device Technology.

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Entwicklung einer Technologie zur Herstellung von TaC-basierten Sprühbeschichtungen für die Halbleitermaterialherstellung und -prozessierung

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Entwicklung einer Technologie zur Herstellung von TaC-basierten Sprühbeschichtungen für die Halbleitermaterialherstellung und -prozessierung

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Deep learning applications for EUV lithographic imaging

This project is dedicated to the exploration of the capabilities of deep learning models for EUV lithography simulations and utilize them to speed-up a variety of computationally intensive applications. A wide range of techniques to optimize the accuracy and data efficency of deep learning models for lithography are also investigated. The developed accurate models and the frameworks for training data optimizations are applied to practical EUV use-cases in addition to experimental SEM images of wafer prints.

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Growth and Curvature Modelling of GaN-on-Si(111) for Vertical Power Devices

Das Forschungsprojekt wird im Rahmen
eines LEB-Promotionsvorhabens in Zusammenarbeit mit externen
Kooperationspartnern bearbeitet.
High-power
switching devices play a key role in applications such as data centres,
vehicles and power plants. The main goal in developing novel power
devices is to improve the efficiency and reliability of the switching
device while keeping costs low. The interest in developing GaN-based
power devices stems from the fact that it has improved material
properties, i.e., saturation velocity, electron mobility and critical
electric field, than SiC and Si. Consequently, power switching devices
based on GaN can offer low on-resistance, high breakdown voltage and
fast switching.
Growing high quality GaN on Si(111) remains
challenging due to high lattice and thermal mismatch leading to high
threading dislocation density, severe curvature and cracks on the
wafers. Therefore, the stress management in these structures must be
fully understood.

In this work, GaN-based structures that can
withstand high breakdown voltage while exhibiting low on-resistance are
fabricated by metal-organic chemical vapour deposition. The wafers are
then delivered to the partners of the YESvGaN project (European funded
project) for processing and testing. Further, a curvature model is being
developed to predict the wafer shape during growth and after cooling
based on the epitaxy process to provide more information on stress
management.

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