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Friedrich-Alexander-Universität Chair of Electron Devices
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  • About Us
  • Research
    • Silicon Semiconductor Technology
      • Realisierung von Koppelkondensatoren für Betriebsspannungen über 1200V durch Integration von Parallelwiderständen
      • Hybrid polymer based Bragg grating sensors – Fundamental investigations and application
      • A Synergetic Training Network on Energy beam Processing: from Modelling to Industrial Applications
      • Atomic layer deposition of dopant source layers for semiconductor doping – Characterization and modelling of drive-in processes
    • Wide-Bandgap Devices
      • Untersuchungen zur Leistungsdichte und Effizienz eines isolierenden DC/DC-Wandlers in GaN-Technologie
      • Dynamic Characterization of Molded Devices and Fundamental Investigations on Reliability
      • Charge compensation in 4H silicon carbide – Simulation, modelling and experimental verification
      • SiC-BIFET: Untersuchungen zu bipolaren SiC-Feldeffekttransistoren für das Mittelspannungsnetz
      • Development of semiconductor sensors based on silicon carbide
      • Kristallzüchtung von Nitrid-Einkristallen mit hoher Reinheit
    • Anorganische Dünnschichtelektronik
      • GRK 1161: Disperse systems for electronic applications – subproject electron devices in a nano-crystalline matrix
      • Liquid-phase processing of silicon thin films and electron devices based on polysilane precursors
      • Thin-Film Transistors with Novel Architecture for RF Circuits and Systems
      • Engineering of Nanoelectronic Materials – B6 (Druckbare Elektronik)
      • Local leakage currents in nanoparticulate films
    • Quantum Technologies
    • Other Projects
      • Herstellung und Charakterisierung von Heterostrukturen aus 2D Materialien
      • Entwicklung eines PDMS-basierten Mikrofluidiksystems
      • Erforschung der Oberflächenpräparation und der Rückgewinnung von Aluminiumnitrid-Substraten
      • Growth and stability of anisotropic nanoparticles in liquids
      • Leistungszentrum Elektroniksysteme (LZE), Teilprojekt 1: “Impedanzmessplatz für DC/DC-Wandler”
      • Leistungszentrum Elektroniksysteme (LZE), Teilprojekt 2: “Robuste Gestaltung induktiver Energieüberträger für bewegte Anwendungen”
      • Printable soft magnetic polymers for power electronics
      • Stability Under Process Variability for Advanced Interconnects and Devices Beyond 7 nm node
      • LightWave: High Performance Computing of Optical Wave
      • Intelligentes Leistungsmodul
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Intelligentes Leistungsmodul

In page navigation: Research
  • Silicon Semiconductor Technology
  • Wide-Bandgap Devices
  • Anorganic Thin Film Electronics
  • Anorganische Dünnschichtelektronik
  • Quantum Technologies
  • Other Projects
    • Herstellung und Charakterisierung von Heterostrukturen aus 2D Materialien
    • Entwicklung eines PDMS-basierten Mikrofluidiksystems
    • Erforschung der Oberflächenpräparation und der Rückgewinnung von Aluminiumnitrid-Substraten
    • Growth and stability of anisotropic nanoparticles in liquids
    • Leistungszentrum Elektroniksysteme (LZE), Teilprojekt 1: "Impedanzmessplatz für DC/DC-Wandler"
    • Leistungszentrum Elektroniksysteme (LZE), Teilprojekt 2: "Robuste Gestaltung induktiver Energieüberträger für bewegte Anwendungen"
    • Printable soft magnetic polymers for power electronics
    • Stability Under Process Variability for Advanced Interconnects and Devices Beyond 7 nm node
    • LightWave: High Performance Computing of Optical Wave
    • Intelligentes Leistungsmodul

Intelligentes Leistungsmodul

Intelligentes Leistungsmodul

(Third Party Funds Group – Sub project)

Overall project: Verbundprojekt: Keramische Aufbau- und Integrationstechnik für robuste Signal- und Leistungselektronik (KAIROS)
Project leader: Lothar Frey
Project members:
Start date: 1. August 2011
End date: 31. October 2014
Acronym: KAIROS
Funding source: BMBF / Verbundprojekt
URL:

Abstract

Power converters like DC/DC and DC/AC converters are using MOSFET or IGBT power semiconductor switches. To increase the power density by reducing the size of the passive devices like capacitors, inductors and transformers, a demand for increasing the switching frequency of the power semiconductor switches exists. During this project, a galvanically isolated gate-driver integrated circuit was realized as an ASIC chipset providing a flexible control of the switching speed of the driven power switches (i.e., IGBT or MOSFET).

The basic idea behind the proposed concept is to use a buck-boost stage for controlling the charging and discharging of the gate of the power transistor. To provide an accurate control of the output current and output voltage slopes of the power transistor, a precise charging and discharging of its gate capacity is required during its switching period, thus necessitating an impulse train (i.e., burst) in the Megahertz frequency range. This ASIC was designed in a 0.35µm high-temperature automotive qualified CMOS technology and integrates the time critical and driving-strength dependent analog and mixed-signal parts of the gate-driver circuit. Furthermore, it reduces the switching losses occurring in the gate of the used power devices by using a regenerative switching circuitry. Thanks to these functions, the generated electromagnetic interferences are much better controlled over all the load range in modern power converters using half-bridge or full-bridge topologies in combination with hard switching. The ASIC was assembled in a molded 44pin TQFP plastic package and the maximum switching frequency of the gate-driver when driving a capacitive load with 15V switching voltage was measured to be 25MHz at a 50% duty cycle. By using a complex programmable logic device for generating the pulse sequences in dependence of the load current and providing also the switching sequences for regenerative switching, a large range of power applications can potentially benefit from the developed gate-driver circuit.

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    Chair of Electron Devices
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