Atomic layer deposition of dopant source layers for semiconductor doping – Characterization and modelling of drive-in processes
Atomic layer deposition of dopant source layers for semiconductor doping - Characterization and modelling of drive-in processes
(Third Party Funds Single)
Atomic layer deposition processes for phosphorus-containing layers will be developed and investigated. Recently developed ALD processes for boron oxide and antimony oxide will be further improved and analyzed as well. These layers will be used as a dopant sources for silicon doping to produce ultra-shallow and homogeneous doped pn junctions, especially for applications, where doping on three-dimensional surface configurations is required.
In addition, suitable methods for stabilization of unstable dopant layers need to be found and analyzed. The deposited layers will be characterized and the diffusion processes in the silicon and in the oxide phase will be studied, and thus the doping processes will be modeled.
Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon
In: physica status solidi (a) 216 (2019), Article No.: 1900306
DOI: 10.1002/pssa.201900306 , , , :
Atomic layer deposition of phosphorus oxide films as solid sources for doping of semiconductor structures
18th IEEE International Conference on Nanotechnology (IEEE-NANO) (Cork, 23. July 2018 - 26. July 2018)
In: 2018 IEEE 18TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), NEW YORK: 2018
DOI: 10.1109/nano.2018.8626235 , , , , , :