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Friedrich-Alexander-Universität Chair of Electron Devices
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    • Silicon Semiconductor Technology
      • Realisierung von Koppelkondensatoren für Betriebsspannungen über 1200V durch Integration von Parallelwiderständen
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      • Local leakage currents in nanoparticulate films
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      • Herstellung und Charakterisierung von Heterostrukturen aus 2D Materialien
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Local leakage currents in nanoparticulate films

In page navigation: Research
  • Silicon Semiconductor Technology
  • Wide-Bandgap Devices
  • Anorganic Thin Film Electronics
    • GRK 1161: Disperse systems for electronic applications - subproject electron devices in a nano-crystalline matrix
    • Liquid-phase processing of silicon thin films and electron devices based on polysilane precursors
    • Thin-Film Transistors with Novel Architecture for RF Circuits and Systems
    • Engineering of Nanoelectronic Materials - B6 (Druckbare Elektronik)
    • Local leakage currents in nanoparticulate films
  • Anorganische Dünnschichtelektronik
  • Quantum Technologies
  • Other Projects

Local leakage currents in nanoparticulate films

Hybride semiconductors – metal nanowire composites for opto-electronic devices

(Third Party Funds Group – Sub project)

Overall project: In situ Microscopy with Electrons, X-rays and Scanning Probes
Project leader: Christoph Brabec, Lothar Frey
Project members: Simon Kahmann, Moses Richter, Shreetu Shrestha, Ievgen Levchuk, César Omar Ramírez Quiroz, Violetta Kalancha, Jonas Wortmann
Start date: 1. October 2013
End date: 30. September 2017
Acronym: GRK1896-A6
Funding source: DFG / Graduiertenkolleg (GRK)
URL:

Abstract

Project A6 combines the findings from the first funding period, which investigated the transport properties of metallic nanowires as well as inorganic nanoparticles as a function of microstructure and microstructure with c-AFM and electron microscopy methods. The follow-up project will address the electrical and optical properties of nanoparticle-filled nanowire composites. The focus of the investigations is on the microscopic understanding of the charge carrier transport between the semiconducting matrix and the metallically conductive nanowires. In situ X-ray spectroscopy under light (c-AFM and STM) should provide insight into the electrical processes at the interfaces.

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    Chair of Electron Devices
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