Thin-Film Transistors with Novel Architecture for RF Circuits and Systems
Thin-Film Transistors with Novel Architecture for RF Circuits and Systems
(Third Party Funds Group – Sub project)
Overall project: SPP 1796: High Frequency Flexible Bendable Electronics for Wireless Communication Systems (FFLexCom)
Project leader: ,
Project members: , ,
Start date: 1. June 2016
End date: 30. May 2019
Acronym: FFlexCom
Funding source: DFG / Schwerpunktprogramm (SPP)
URL:
Abstract
In state of the art thin-film-transistors (TFTs), both source and drain electrodes are placed at the same side or interface of the semiconductor layer. Positioning the two contacts on opposite interfaces of the semiconductor in an Alternating Contact TFT (ACTFT) enables new degrees of freedom for device design, optimization, and operation. The ability to enable short channel lengths is explored for application in radio frequency (RF) circuitry in this project.Two research groups of FAU Erlangen Nuremberg being experts in device technology (Chair of Electron Devices) and RF circuits engineering (Institute of Electronics Engineering) join forces to cover the integrated development of ACTFTs towards basic RF building blocks and systems based on flexible metal oxide TFTs. Studies on device physics, RF behavior, and novel circuit concepts will open perspectives for the use of large area, thin, and bendable TFT technologies in future industrial, consumer, and wearable electronics.