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Friedrich-Alexander-Universität Chair of Electron Devices
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  • About Us
  • Research
    • Silicon Semiconductor Technology
      • Realisierung von Koppelkondensatoren für Betriebsspannungen über 1200V durch Integration von Parallelwiderständen
      • Hybrid polymer based Bragg grating sensors – Fundamental investigations and application
      • A Synergetic Training Network on Energy beam Processing: from Modelling to Industrial Applications
      • Atomic layer deposition of dopant source layers for semiconductor doping – Characterization and modelling of drive-in processes
    • Wide-Bandgap Devices
      • Untersuchungen zur Leistungsdichte und Effizienz eines isolierenden DC/DC-Wandlers in GaN-Technologie
      • Dynamic Characterization of Molded Devices and Fundamental Investigations on Reliability
      • Charge compensation in 4H silicon carbide – Simulation, modelling and experimental verification
      • SiC-BIFET: Untersuchungen zu bipolaren SiC-Feldeffekttransistoren für das Mittelspannungsnetz
      • Development of semiconductor sensors based on silicon carbide
      • Kristallzüchtung von Nitrid-Einkristallen mit hoher Reinheit
    • Anorganische Dünnschichtelektronik
      • GRK 1161: Disperse systems for electronic applications – subproject electron devices in a nano-crystalline matrix
      • Liquid-phase processing of silicon thin films and electron devices based on polysilane precursors
      • Thin-Film Transistors with Novel Architecture for RF Circuits and Systems
      • Engineering of Nanoelectronic Materials – B6 (Druckbare Elektronik)
      • Local leakage currents in nanoparticulate films
    • Quantum Technologies
    • Other Projects
      • Herstellung und Charakterisierung von Heterostrukturen aus 2D Materialien
      • Entwicklung eines PDMS-basierten Mikrofluidiksystems
      • Erforschung der Oberflächenpräparation und der Rückgewinnung von Aluminiumnitrid-Substraten
      • Growth and stability of anisotropic nanoparticles in liquids
      • Leistungszentrum Elektroniksysteme (LZE), Teilprojekt 1: “Impedanzmessplatz für DC/DC-Wandler”
      • Leistungszentrum Elektroniksysteme (LZE), Teilprojekt 2: “Robuste Gestaltung induktiver Energieüberträger für bewegte Anwendungen”
      • Printable soft magnetic polymers for power electronics
      • Stability Under Process Variability for Advanced Interconnects and Devices Beyond 7 nm node
      • LightWave: High Performance Computing of Optical Wave
      • Intelligentes Leistungsmodul
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  4. Values, Responsibility and Ethos

Values, Responsibility and Ethos

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Values, Responsibility and Ethos

Ansprechpartner

Jörg Schulze

Prof. Dr.-Ing. habil. Jörg Schulze

Department of Electrical-Electronic-Communication Engineering
Chair of Electron Devices

Room: Room 1.122
Cauerstr. 6
91058 Erlangen
  • Phone number: +49 9131 85-28634
  • Email: joerg.schulze@fau.de
  • Website: https://www.leb.tf.fau.de/

Values, Responsibility and Ethos – The principle of sustainability

What should we do?

Immanuel Kant

We should, must work, learn, study in such a way that social-economic developments are reflected in their entirety and thus the needs of all people, including future generations, are satisfied.


Immanuel Kant (1724-1804), German philosopher; painting by Johann Gottlieb Becker (1768), Schiller National Museum (Marbach am Neckar) | Photo: Johann Gottlieb Becker (1720-1782), Public Domain, Wikimedia Commons

We are committed to the principle of action of sustainability, which ensures the use of resources for the sustainable satisfaction of needs while preserving the natural regenerative capacity of the living beings and ecosystems involved.

In doing so, we commit ourselves and our work to the 17 Sustainable Development Goals of the United Nations.


The 17 Sustainable Development Goals of the United Nations. | Photo: United Nations

Chair of Electron Devices
FAU Erlangen-Nürnberg

Cauerstr. 6
91058 Erlangen
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