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Friedrich-Alexander-Universität Chair of Electron Devices
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    • Silicon Semiconductor Technology
      • Realisierung von Koppelkondensatoren für Betriebsspannungen über 1200V durch Integration von Parallelwiderständen
      • Hybrid polymer based Bragg grating sensors – Fundamental investigations and application
      • A Synergetic Training Network on Energy beam Processing: from Modelling to Industrial Applications
      • Atomic layer deposition of dopant source layers for semiconductor doping – Characterization and modelling of drive-in processes
    • Wide-Bandgap Devices
      • Untersuchungen zur Leistungsdichte und Effizienz eines isolierenden DC/DC-Wandlers in GaN-Technologie
      • Dynamic Characterization of Molded Devices and Fundamental Investigations on Reliability
      • Charge compensation in 4H silicon carbide – Simulation, modelling and experimental verification
      • SiC-BIFET: Untersuchungen zu bipolaren SiC-Feldeffekttransistoren für das Mittelspannungsnetz
      • Development of semiconductor sensors based on silicon carbide
      • Kristallzüchtung von Nitrid-Einkristallen mit hoher Reinheit
    • Anorganische Dünnschichtelektronik
      • GRK 1161: Disperse systems for electronic applications – subproject electron devices in a nano-crystalline matrix
      • Liquid-phase processing of silicon thin films and electron devices based on polysilane precursors
      • Thin-Film Transistors with Novel Architecture for RF Circuits and Systems
      • Engineering of Nanoelectronic Materials – B6 (Druckbare Elektronik)
      • Local leakage currents in nanoparticulate films
    • Quantum Technologies
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      • Herstellung und Charakterisierung von Heterostrukturen aus 2D Materialien
      • Entwicklung eines PDMS-basierten Mikrofluidiksystems
      • Erforschung der Oberflächenpräparation und der Rückgewinnung von Aluminiumnitrid-Substraten
      • Growth and stability of anisotropic nanoparticles in liquids
      • Leistungszentrum Elektroniksysteme (LZE), Teilprojekt 1: “Impedanzmessplatz für DC/DC-Wandler”
      • Leistungszentrum Elektroniksysteme (LZE), Teilprojekt 2: “Robuste Gestaltung induktiver Energieüberträger für bewegte Anwendungen”
      • Printable soft magnetic polymers for power electronics
      • Stability Under Process Variability for Advanced Interconnects and Devices Beyond 7 nm node
      • LightWave: High Performance Computing of Optical Wave
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Quantum Technologies

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Quantum Technologies

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Scalable quantum networks require stablequantum platforms with quantum processing capabilities and a reliablespin-optical interface. The search for ideal systems is still ongoing, astoday’s available platforms suffer from too large electron phonon interactionand/or spectral diffusion.

Recent progress in the field of color defects as quantum systems in  4H-SiC showed that the negatively charged silicon vacancy center in siliconcarbide is immune to both drawbacks. Thanks to its 4A2 symmetry inground and excited states, optical resonances are stable with near Fouriertransform limited linewidths. In combination with millisecond long spincoherence times originating from the high purity crystal, a high fidelityoptically-assisted spin initialization and coherent control was presented.Crucially, the result showed coherent coupling to single nuclear spins with ~1kHz resolution, which is sufficient to implement quantum memories and quantumerror correction.

The summary of the findings makes the siliconvacancy in silicon carbide a prime candidate for realizing memory-assistedquantum network applications using semiconductor-based spin-to-photoninterfaces and coherently coupled nuclear spins.

References: Nagy  et al., Nature Communications 10, 1954 (2019)

HTTPS://WWW.NATURE.COM/ARTICLES/S41467-019-09873-9

Contact Persons:

  • Roland Nagy

Participating Scientists:

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Publications:

    Chair of Electron Devices
    FAU Erlangen-Nürnberg

    Cauerstr. 6
    91058 Erlangen
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