Engineering of Nanoelectronic Materials – B6 (Druckbare Elektronik)
Engineering of Nanoelectronic Materials - B6 (Druckbare Elektronik)
(Third Party Funds Group – Sub project)
Overall project: EXC 315: New Materials and Processes - Hierarchical Structure Formation for Functional Devices
Project leader:
Project members: , ,
Start date: 1. November 2012
End date: 31. October 2017
Acronym: EXC 315/2
Funding source: DFG / Exzellenzinitiative (EXIN)
URL:
Abstract
Processing and physics of thin-film devices based on group-IV nanoparticles are in the focus of this project.
It has been shown in an earlier stage of the project that formulation, deposition, and thermal post treatment define the electrical behavior of silicon nanoparticle thin films. Dedicated passivation shemes have been developed for suppression of surface effects on the device characteristics.
In the current period the research is extended to germanium and SiGe alloys in different compositions. Special focus is laid on high-level device-related issues as the influence of geometry on electrical parameters, the optimization of metal-to-semiconductor contacts, and the integration of devices into functional latches . Photonic sintering for modification of inter-particle contacts is targeted additionally.